Modified contact for programmable devices

ABSTRACT

In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. The resistivity of the contact is modified by at least one of implanting ions into the contact, depositing a material on the contact, and treating the contact with plasma. In an aspect, a spacer is formed within the opening and programmable material is formed within the opening and on the modified contact. A conductor is formed on the programmable material and the contact transmits to a signal line.

FIELD

Programmable devices including phase change memory devices, having acompositionally modified contact, that can be programmed by changing thestate of a phase change material.

BACKGROUND

Typical computers, or computer related devices, include physical memory,usually referred to as main memory or random access memory (RAM).Generally, RAM is memory that is available to computer programs andread-only memory (ROM) is memory that is used, for example, to storeprograms that boot a computer and perform diagnostics. Typical memorytechnologies include dynamic random access memory (DRAM), static randomaccess memory (SRAM), erasable programmable read-only memory (EPROM),and electrically erasable programmable read-only memory (EEPROM).

Solid state memory devices typically employ micro-electronic circuitelements for each memory bit (e.g., one to four transistors per bit) inmemory applications. Since one or more electronic circuit elements arerequired for each memory bit, these devices may consume considerablechip “real estate” to store a bit of information, which limits thedensity of a memory chip. The primary “non-volatile” memory element ofthese devices, such as an EEPROM, typically employ a floating gate fieldeffect transistor device that has limited re-programmability and whichholds a charge on the gate of field effect transistor to store eachmemory bit. These classes of memory devices are also relatively slow toprogram.

Phase change memory devices use phase change materials, i.e., materialsthat can be electrically switched between a generally amorphous and agenerally crystalline state, for electronic memory application. One typeof memory element originally developed by Energy Conversion Devices,Inc. of Troy, Mich. utilizes a phase change material that can be, in oneapplication, electrically switched between a structural state ofgenerally amorphous and generally crystalline local order or betweendifferent detectable states of local order across the entire spectrumbetween completely amorphous and completely crystalline states. Thesedifferent structured states have different values of resistivity, andtherefore different electrical read-out. Typical materials suitable forsuch application include those utilizing various chalcogenide elements.These electrical memory devices typically do not use field effecttransistor devices as the memory storage element, but comprise, in theelectrical context, a monolithic body of thin film chalcogenidematerial. As a result, very little chip real estate is required to storea bit of information, thereby providing for inherently high densitymemory chips. The state change materials are also truly non-volatile inthat, when set in either a crystalline, semi-crystalline, amorphous, orsemi-amorphous state representing a resistance value, that value isretained until reprogrammed as that value represents a physical state ofthe material (e.g., crystalline or amorphous). Thus, phase change memorymaterials represent a significant improvement in non-volatile memory.

One characteristic common to solid state and phase change memory devicesis significant power consumption particularly in setting orreprogramming memory elements. Power consumption is important,particularly in portable devices that rely on power cells (e.g.,batteries). It would be desirable to decrease the power consumption of amemory device. Another characteristic common to solid state and phasechange memory devices is limited reprogrammable cycle life from/to anamorphous and crystalline state. Further, over time the phase changematerial can fail to reliably reprogram from/to an amorphous and acrystalline state. It would be desirable to increase the programmablecycle life of the phase change memory material.

Chemical reactivity and delamination of phase change material is aconcern common to solid state and phase change memory devices. It wouldbe desirable to increase the adherence of phase change material to itscontact and simultaneously decrease the chemical reactivity of phasechange material with its contact.

BRIEF DESCRIPTION OF THE DRAWINGS

Additional advantages of the invention will become apparent upon readingthe following detailed description and upon reference to the drawings,in which:

FIG. 1 is a schematic diagram of an embodiment of an array of memoryelements;

FIG. 2 schematically illustrates a cross-sectional planar side view of aportion of a semiconductor substrate having dielectric trenches formedtherein defining a z-direction thickness of a memory cell in accordancewith one embodiment of forming memory element on a substrate;

FIG. 3 depicts the structure of FIG. 2, through the same cross-sectionalview, after the introduction of dopants to form an isolation device fora memory element;

FIG. 4 depicts the structure of FIG. 3 after forming trenches;

FIG. 5 depicts a schematic top view of the structure of FIG. 4;

FIG. 6 depicts the structure of FIG. 4 after forming contacts;

FIG. 7 depicts the structure of FIG. 6, through the same cross-sectionalview, after forming a masking material and a dielectric material;

FIG. 8 depicts another cross-section view of the structure of FIG. 7,after forming an opening through the dielectric exposing the contact;

FIG. 9 depicts the structure of FIG. 8, through the same cross-sectionalview, illustrating an angled modification of the contact;

FIG. 10 depicts another cross-sectional view of the structure of FIG. 9illustrating an area of modification to the contact;

FIG. 11 depicts the structure of FIG. 8, through the samecross-sectional view, after conformally forming a spacer within theopening;

FIG. 12 depicts the structure of FIG. 9, through the samecross-sectional view, after etching the spacer;

FIG. 13 depicts the structure of FIG. 12, through the samecross-sectional view, illustrating a self-aligned modification of thecontact;

FIG. 14 depicts the structure of FIG. 12, through the samecross-sectional view, illustrating an angled modification of thecontact;

FIG. 15 depicts another cross-sectional view of the structure of FIG. 14illustrating an area of modification to the contact;

FIG. 16 depicts the same cross-sectional view of the structure of FIG.12, after forming programmable material, a barrier and a conductor;

FIG. 17 depicts the same cross-sectional view of the structure of FIG.16, after patterning the programmable material, barrier and conductor;

FIG. 18 depicts another cross-sectional view of the structure of FIG.17;

FIG. 19 depicts the same cross-sectional view of the structure of FIG.18, after forming a dielectric material and a signal line; and

FIG. 20 depicts one method of forming a memory device.

FIG. 21 depicts one system embodiment including a memory having astructure similar to that described by FIG. 19.

DETAILED DESCRIPTION

Exemplary embodiments are described with reference to specificconfigurations. Those of ordinary skill in the art will appreciate thatvarious changes and modifications can be made while remaining within thescope of the appended claims. Additionally, well-known elements,devices, components, circuits, process steps and the like may not be setforth in detail in order to avoid obscuring the invention.

A memory device utilizing programmable material (e.g. phase change) todetermine the state of memory elements of the device is described. Theprogrammable material reprograms to an amorphous and crystalline statewith improved (generally lower) power consumption relative to previousdevices, achieved in part by modifying the resistivity of a contact. Inan embodiment, the resistivity of the contact is increased, increasingpower dissipation in the contact and increasing heat transferred fromthe contact to the programmable material, thereby reducing the requiredprogramming current and improving reprogramming reliability. In anembodiment, an improved (generally less) chemically reactive contact isdescribed. In an embodiment, a programmable material having improvedadherence (e.g. less delamination) to a contact is described.

In another embodiment, a method of modifying the resistivity of acontact is described. The contact can be modified by at least one ofimplanting ions into the contact, depositing material on the contact,and treating the contact with plasma. Implanting of ions can beperformed at normal incidence to a surface of the contact exposed to theopening, and also at an angle to the surface of the contact exposed tothe opening.

The described memory device and method provides lower programmingcurrent requirements, improved device reliability, improved programmablecycle life, and lower cost and scalability relative to previous devices.Further, in an embodiment, the apparatus is manufacturable withconventional process toolsets and facilities.

FIG. 1 shows a schematic diagram of an embodiment of a memory arraycomprised of a plurality of memory elements presented and formed in thecontext of the description provided herein. In this example, the circuitof memory array 5 includes an xy grid with memory elements 30electrically interconnected in series with isolation devices 25 on aportion of a chip. Address lines 10 (e.g., columns) and 20 (e.g., rows)are connected, in one embodiment, to external addressing circuitry in aconventional manner. One purpose of the xy grid array of memory elementsin combination with isolation devices is to enable each discrete memoryelement to be read and written without interfering with the informationstored in adjacent or remote memory elements of the array.

A memory array such as memory device 5 of FIG. 1 can be formed in aportion, including the entire portion, of a substrate. A typicalsubstrate includes a semiconductor substrate such as a siliconsubstrate. Other substrates including, but not limited to, substratesthat contain ceramic material, organic material, or glass material aspart of the infrastructure are also suitable. In the case of a siliconsemiconductor substrate, memory array 5 can be fabricated over an areaof the substrate at the wafer level and then the wafer reduced throughsingulation into discrete die or chips, some or all of the die or chipshaving a memory array formed thereon. Additional addressing circuitry(e.g., decoders, etc.) can be formed as known to those of skill in theart.

FIGS. 2-14 illustrate an embodiment of the fabrication of representativememory element 15 of FIG. 1. FIG. 2 depicts a portion of substrate 100that is, for example, a semiconductor (e.g., silicon) substrate. In thisexample, a P-type dopant such as boron is introduced in portion 110. Inone example, a suitable concentration of P-type dopant is on the orderof about 5×10¹⁹ to 1×10²⁰ atoms per cubic centimeters (atoms/cm³)rendering portion 110 of substrate 100 representatively P⁺⁺. Overlyingportion 1 10 of substrate 100, in this example, is portion 120 of P-typeepitaxial silicon. In one example, the dopant concentration is on theorder of about 10¹⁶ to 10¹⁷ atoms/cm^(3.)

FIG. 2 also depicts shallow trench isolation (STI) structures 130 formedin epitaxial portion 120 of substrate 100. As will become apparent inthe subsequent discussion, STI structures 130 serve, in one aspect, todefine the z-direction thickness of a memory cell, with at this pointonly the z-direction thickness of a memory cell defined. In oneembodiment, memory cell z-direction regions 135A and 135B are patternedas strips with the x-direction dimension greater than the z-directiondimension. In another aspect, STI structures 130 serve to isolateindividual memory elements from one another as well as associatedcircuit elements (e.g., transistor devices) formed in and on thesubstrate. Current state of the art photolithography techniques utilizedto pattern STI structures define the z-direction thickness of memorycell regions 135A and 135B can produce feature sizes (z-directionthickness) as small as 0.25 microns (μm).

FIG. 3 depicts the structure of FIG. 2 after further fabricationoperations in memory cell regions 135A and 135B. Within each memory cellregion (strip), overlying epitaxial portion 120 of substrate 100 isfirst conductor or signal line material 140. In one example, firstconductor or signal line material 140 is N-type doped silicon formed bythe introduction of, for example, phosphorous or arsenic to aconcentration on the order of about 10¹⁸ to 10¹⁹ atoms/cm³ (e.g., N⁺silicon). In this example, first conductor or signal line material 140serves as an address line, a row line (e.g., row line 20 of FIG. 1).Overlying first conductor or signal line material 140 is an isolationdevice (e.g., isolation device 25 of FIG. 1). In one example, theisolation device is a PN diode formed of N-type silicon portion 150(e.g., dopant concentration on the order of about 10¹⁴ to 10¹⁸atoms/cm³) and P-type silicon portion 160 (e.g., dopant concentration onthe order of about 10¹⁹ to 10²⁰ atoms/cm³). Although a PN diode isshown, it is to be appreciated that other isolation structures aresimilarly suitable. Such devices include, but are not limited to, metaloxide semiconductor (MOS) devices.

FIG. 4 depicts the structure of FIG. 3 from an xy perspective afterforming trenches 190 in epitaxial portion 120 of substrate 100. Trenches190 are formed, in this example, orthogonal to STI structures 130.Trenches 190 define the x-direction thickness of a memory cell.According to current photolithographic techniques, a suitable featuresize for the x-direction thickness is as small as 0.25 μm. FIG. 4 alsodepicts memory cells 145A and 145B separated by trenches 190, having az-direction thickness defined by STI structures 130 and an x-directionthickness defined by trenches 190. The definition of the x-directionthickness involves, in one embodiment, an etch to the conductor orsignal line 140 of the memory line stack to define memory cells 145A and145B of memory cell region 135A. In the case of an etch, the etchproceeds through the memory line stack to, in this example, a portion ofconductor or signal line 140. A timed etch can be utilized to stop anetch at this point. Following the patterning, N-type dopant isintroduced at the base of each trench 190 to form pockets 200 having adopant concentration on the order of about 10¹⁸ to 10²⁰ atoms/cm³ (e.g.,N⁺ region) between memory cells 145A and 145B.

Following the introduction of pockets 200, a dielectric material such assilicon dioxide is introduced in trenches 190 to form STI structures132. The superior surface (as viewed) may then be planarized with, forexample, a chemical-mechanical polish. FIG. 5 depicts an xz perspectiveof the structure of FIG. 4 with memory cells (e.g., memory cells 145Aand 145B) separated by STI structures 130 and 132.

FIG. 6 depicts the structure of FIG. 4 (i.e., an xy perspective)following the formation of a material of, in this example, refractorymetal silicide such as cobalt silicide (CoSi₂) in a portion of p-typesilicon portion 160 to define contact 170. Contact 170, in one aspect,serves as a low resistance material in the fabrication of peripheralcircuitry (e.g., addressing circuitry) of the circuit structure on thechip.

FIG. 7 depicts the structure of FIG. 6 after the introduction of maskingmaterial 180. As will become more clear later, masking material 180serves, in one sense, as an etch stop for a subsequent etch operation.In one embodiment, a suitable material for masking material 180 is adielectric material such as silicon nitride (Si₃N₄).

FIG. 7 also depicts dielectric material 210 introduced over thestructure to a thickness on the order of 100Å to 50,000Å sufficient toblanket memory cells 145A and 145B. In one embodiment, dielectricmaterial 210 is SiO₂. In another embodiment, dielectric material 210 isa material selected for its reduced thermal conductivity, κ, preferablya thermal conductivity less than κSiO₂, more preferably three to 10times less κSiO₂. As a general convention, SiO₂ and Si₃N₄ have κ valueson the order of 1.0. Thus, in addition to SiO₂, suitable materials fordielectric material 210 include those materials that have κ values lessthan 1.0. Certain high temperature polymers having κ values less than1.0, include carbide materials, Aerogel, Xerogel (κ on the order of 0.1)and their derivatives.

FIG. 8 depicts the structure of FIG. 7, through the same cross-sectionalview, after forming openings 220 through dielectric 210 and maskingmaterial 180, exposing contact 170. In one embodiment, openings 220 areformed by patterning of circular holes etched through dielectric 210 andmasking material 180, using conventional photolithography and dryetching techniques. In terms of state of the art photolithographytechniques, circular openings as small as 0.25 μm in diameter can bepatterned. It is to be appreciated that, in addition to circularopenings, other openings such as rectangular openings couldalternatively be employed.

FIG. 9 depicts the structure of FIG. 8, through the same cross-sectionalview, illustrating an angled modification of contact 170. It is to beappreciated that the modification of contact 170 can also beaccomplished in a non-angled manner. By “angled” it is meant that, forexample, the direction of ion implantation is not parallel to theillustrated y-axis depicted in FIG. 9. Further, while the modificationdepicted by FIG. 9 illustrates ion implantation, other methods ofmodification can be employed including, but not limited to, depositingmaterial onto contact 170 and treating contact 170 with plasma, therebyincreasing the resistivity of contact 170.

In an embodiment, contact 170 is modified by implanting ions 175 intocontact 170. Ion implantation provides positional control precision andavoids side diffusion issues. Impact damage to contact 170 from ionimplantation results in partial or complete amorphization, increasingthe resistivity of contact 170 and increasing the ability of contact 170to form chemical compounds with atoms introduced by ion implantation orother methods. Ions that are capable of forming compounds with CoSi₂ andthereby increase the resistivity of contact 170 can be utilized,including oxygen ions, nitrogen ions and carbon ions. For example, inthe case that contact 170 is composed of CoSi₂, implanting oxygen ionswithin the CoSi₂ causes the formation of insulator regions of SiO₂within contact 170, thereby increasing the resistivity of contact 170.Alternatively, when nitrogen ions are implanted into contact 170(composed of CoSi₂), insulator regions of Si₃N₄ are formed withincontact 170. Ion implantation provides precision in that the number ofions specified can be correspondingly implanted. Further, the depth ofion implantation can be selected using conventionally known publishedtables and considering factors including ion mass, ion energy, andcomposition and thickness of contact 170.

In an embodiment, as shown in FIG. 9, dielectric 210 serves as an ionimplantation mask allowing ions to be implanted in contact 170 or in aportion of contact 170. Most films employed in the semiconductor processcan be used to block an ion beam, including SiO₂, silicon nitride,aluminum, and other thin metal films.

In an embodiment, contact 170 is modified by depositing a resistivematerial on contact 170. In an embodiment, the resistive material has aresistivity of one of 0.001 ohm-cm to 0.5 ohm-cm. The resistivity isselected by specifying a resistive material film thickness, specifying atarget programming current, specifying a voltage budget for the memorydevice and utilizing conventional calculations. In an embodiment,contact 170 has a series resistance of one of 200 ohms to 2000 ohms. Inan embodiment, the resistive material is formed on contact 170 or on aportion of contact 170. Although resistive material is also formed onthe walls of openings 220, significant current is not shunted away fromprogrammable material 404, given a sufficiently high resistivity of theresistive material.

In an embodiment, contact 170 is modified by plasma treatment byexposing contact 170 within openings 220 to at least one of activatednitrogen, activated oxygen and ammonia. The plasma chemically reactswith, and increases the resistivity of, contact 170. Moreover, theresistivity of contact 170 can be modified using one of any, acombination of any, and all of the above referenced methods.

FIG. 10 depicts another cross-sectional view of the structure of FIG. 9illustrating an area of modification to contact 170 by implanting ions175 at an angle to the y-axis. The area of contact 170 that is modifiedis depicted as modified area 172 shown on the perimeter of contact 170,within opening 220. In an embodiment, modified area 172 is higher inresistivity than the remainder of contact 170. In an embodiment,programmable material 404 that undergoes a phase change is positioned oncontact 170, but not on modified area 172. Less programmable materialthat undergoes a phase change is therefore utilized, resulting in lesspower consumption and improved programming reliability. In anotherembodiment, in which a non-angled modification of contact 170 isemployed, modified area 172 includes the entire exposed surface area ofcontact 170 within openings 220, and programmable material 404 thatundergoes a phase change is formed on all of modified area 172. Byincreasing the resistivity of contact 170, the power dissipation andheat transferred from contact 170 to programmable material 404 isincreased which can reduce programming current requirements and improveprogramming reliability. Further, by increasing the resistivity ofcontact 170, the chemical reactivity of contact 170 with programmablematerial 404 can be decreased and adherence of programmable material 404to the contact 170 can be increased.

FIG. 11 depicts the structure of FIG. 8, through the samecross-sectional view, after forming spacer material 402 within openings220 and on dielectric 210. In one embodiment, spacer material 402 isconformally formed, for example by chemical vapor deposition oftetra-ethyl-ortho-silicate (TEOS) on the substrate. At this point offabrication, spacer material covers contact 170 within openings 220.

FIG. 12 depicts the structure of FIG.11 after spacer material 402 isetched to form dielectric spacers (spacer material portions 402A) insideopenings 220. In one embodiment, spacer material 402 is anisotropicallyetched using a timed etch. In one aspect, that will become more clearlater, spacer material 402 serves to reduce the quantity of programmablematerial 404 (FIG. 16) on contact 170.

FIG. 13 depicts the structure of FIG. 12, through the samecross-sectional view, illustrating a self-aligned modification ofcontact 170. The modification is self-aligned by spacers 402A that actas an ion implantation mask. It is to be appreciated that modificationof contact 170 can be performed either before or after (or both beforeand after) spacers 402A are formed. Further, while FIG. 13 showsmodification of contact 170 by implanting ions 175, additional methodsof modification are available including depositing a material on contact170 and exposing contact 170 to plasma.

Alternatively, in an embodiment, ions are implanted at an angle to thewalls of openings 220. FIG. 14 depicts the structure of FIG. 12, throughthe same cross-sectional view, illustrating an angled modification ofcontact 170 by implanting ions 175. Again, it is to be appreciated thatadditional methods of modification are available including depositing amaterial on contact 170 and exposing contact 170 to plasma.

FIG. 15 depicts another cross-sectional view of the structure of FIG. 14illustrating an area of modification to contact 170, namely modifiedarea 173. In an embodiment, programmable material 404 that undergoes aphase change is positioned on contact 170, but not on modified area 172.Less programmable material that undergoes a phase change is thereforeutilized, resulting in less power consumption and improved programmingreliability.

FIG. 16 depicts the structure of FIG. 13 after introducing programmablematerial 404 within openings 220, on contact 170 and on dielectric 210.In one embodiment, programmable material 404, a phase change materialthat has a property such that a physical state (e.g., crystalline,amorphous) can be modified with the application of an amount of energy(e.g., electrical energy, thermal energy). Chalcogenide materials havingthe general formula are known to be suitable for this purpose such thatchalcogenide materials can be introduced on the substrate and on contact170 by conventional deposition techniques.

As further illustrated in FIG. 16, following the introduction ofprogrammable material 404, barrier material 408 is formed onprogrammable material 404 and conductor 410 is formed on barriermaterial 408, in accordance with an embodiment. Barrier material 408serves, in an aspect, to prevent any chemical reaction betweenprogrammable material 404 and conductor 410. In an embodiment,programmable material 404, spacer 402, barrier material 408 andconductor 410 are formed using conventional patterning techniques. In anembodiment, barrier material 408 includes at least one of titanium andtitanium nitride. Titanium and/or Titanium nitride coatings can bedeposited uniformity on a substrate, showing good adhesion in that theyresist flaking, blistering, chipping and peeling. In an embodiment,programmable material 404 includes a phase change material of achalcogenide alloy and contact 170 includes CoSi₂. In an embodiment,chalcogenide alloys suitable as programmable material 404 include atleast one element from column VI of the Periodic Table Of The Elements.In an embodiment, Ge₂Sb₂Te₅ is utilized as programmable material 404.Other chalcogenide alloys utilized as programmable material 404 includeGaSb, InSb, InSe, Sb₂Te₃, GeTe, Ge₂Sb₂Te₅, InSbTe, GaSeTe, SnSb₂Te₄,InSbGe, AgInSbTe, (GeSn)SbTe, GeSb(SeTe), and Te₈₁Gel₅Sb₂S_(2.)

In the structure illustrated in FIG. 16, the contact area ofprogrammable material 404 and contact 170 is minimized by the presenceof spacer material portions 402A. In an aspect, the dimensions ofopenings 220 expose a first contact area of contact 170. In an aspect, asecond contact area, less than the first contact area, is exposed byspacer material 402 and/or spacer material portions 402A. By minimizingthe quantity of programmable material 404, the quantity of programmablematerial 404 that undergoes, for example, a phase change from/toamorphous and crystalline on contact 170 (as shown by region 406) islocalized. Region 406, shown between spacer material portions 402A,defines a limited and localized programming region of programmablematerial 404, adding to the programmable reliability from and to anamorphous and crystalline state of programmable material 404. Ingeneral, by localizing the phase change area, less current is requiredthrough programmable material 404 during programming and reading, andless power consumption results.

FIG. 17 depicts the structure of FIG. 16, from an xy perspective, afterforming openings 412. Openings 412 serve, in one aspect, to define thex-direction thickness of programmable material 404, barrier material 408and conductor 410. Openings 412 serve, in another aspect, to isolateindividual memory elements from one another as well as associatedcircuit elements (e.g., transistor devices) formed on the substrate. Inone embodiment, openings 412 are formed by patterning of openingsthrough conductor 410, barrier material 408 and programmable material404. The patterning can be accomplished using conventionalphotolithographic and etch techniques. In this example, the etchingproceeds through conductor 410, barrier material 408 and programmablematerial 404, to the exclusion of dielectric 210. According to currentphotolithographic techniques, a suitable feature size for thex-direction thickness of openings 412 include as small as 0.25 μm. FIG.18 depicts another cross-sectional view, from the yz perspective, of thestructure of FIG. 17.

FIG. 19 shows the structure of FIG. 18 after forming dielectric material412 on conductor 410. Dielectric material 412 is, for example, SiO₂ orother suitable material that is formed on conductor 410 toelectronically isolate conductor 410. Following the formation,dielectric material 412 is planarized and a via is formed in a portionof the structure through dielectric material 412, dielectric material210, and dielectric material 180 to contact 170. The via is filled withconductive material such as tungsten (W) and a barrier material such asa combination of titanium (Ti) and titanium nitride (TiN). Techniquesfor introducing dielectric material 412, forming and filling conductivevias, and planarizing are known to those skilled in the art. Thestructure shown in FIG. 19 also shows additional conductor or signalline material 414 formed and patterned to mirror that of conductor orsignal line material 140 (e.g., row line) formed on substrate 100.Mirror conductor line material 414 mirrors conductor or signal linematerial 140 and is coupled to conductor or signal line material 140through the conductive via. By mirroring a doped semiconductor such asN-type silicon, mirror conductor line material 414 serves, in oneaspect, to reduce the resistance of conductor or signal line material140 in a memory array, such as memory array 5 illustrated in FIG. 1. Asuitable material for mirror conductor line material 414 includes analuminum material, such as an aluminum alloy.

FIG. 20 describes a method in forming a programmable memory device inaccordance with an embodiment.

Further, as depicted in FIG. 21, a memory array such as memory device 5(FIG. 1) wherein the individual memory cells have a structure similar tothat described with reference to FIG. 19 and the accompanying text canbe incorporated into a suitable system. In one embodiment, system 700includes microprocessor 704, input/output (I/O) port 706, and memory702. Microprocessor 704, I/O port 706, and memory 702 are connected bydata bus 712, address bus 716 and control bus 714. Microprocessor 704fetches instructions or reads data from memory 702 by sending out anaddress on address bus 716 and a memory read signal on control bus 714.Memory 702 outputs the addressed instruction or data word tomicroprocessor 704 on data bus 712. Microprocessor 704 writes a dataword to memory 702 by sending out an address on address bus 716, sendingout the data word on data bus 712, and sending a memory write signal tomemory 702 on control bus 714. I/O port 706 is utilized to couple to atleast one of input device 708 and output device 710.

Having disclosed exemplary embodiments, modifications and variations maybe made to the disclosed embodiments while remaining within the spiritand scope of the invention as defined by the appended claims.

What is claimed is:
 1. A method comprising: forming a dielectric on acontact, the contact formed on a substrate; forming an opening throughthe dielectric exposing the contact; forming a spacer within theopening; modifying the resistivity of the contact after forming thespacer; forming a programmable material within the opening, theprogrammable material on the contact; and forming a conductor to theprogrammable material.
 2. The method of claim 1, wherein formingprogrammable material within the opening comprises forming achalcogenide memory element within the opening.
 3. The method of claim1, wherein modifying the resistivity of the contact comprises at leastone of implanting ions into the contact, depositing material on thecontact, and treating the contact with plasma.
 4. The method of claim 3,wherein implanting ions comprises one of implanting ions at normalincidence to a surface of the contact exposed to the opening, andimplanting ions at an angle to the surface of the contact exposed to theopening.
 5. The method of claim 3, wherein implanting ions comprisesembedding the contact with ions at a predetermined depth utilizing atleast one of oxygen ions, nitrogen ions and carbon ions.
 6. The methodof claim 3, wherein depositing material on the contact comprisesdepositing a predetermined amount of material causing the contact tohave one of 200 ohms to 2000 ohms of series resistance, based on apredetermined current through the contact.